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MPSW13RLRM PDF预览

MPSW13RLRM

更新时间: 2024-11-08 05:44:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 141K
描述
1000mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-10, TO-226AE, 3 PIN

MPSW13RLRM 数据手册

 浏览型号MPSW13RLRM的Datasheet PDF文件第2页浏览型号MPSW13RLRM的Datasheet PDF文件第3页 
ON Semiconductort  
MPSW13  
MPSW14  
One Watt Darlington  
Transistors  
NPN Silicon  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CES  
CBO  
EBO  
V
V
30  
1
2
3
10  
Collector Current — Continuous  
I
C
1.0  
CASE 29–10, STYLE 1  
TO–92 (TO–226AE)  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.0  
8.0  
Watts  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
2.5  
20  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
COLLECTOR 3  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
125  
50  
Unit  
°C/W  
°C/W  
BASE  
2
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
R
q
EMITTER 1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
Collector–Emitter Breakdown Voltage  
V
30  
Vdc  
nAdc  
nAdc  
(BR)CES  
(I = 100 µAdc, V = 0)  
C
BE  
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
100  
100  
CBO  
CB  
E
Emitter Cutoff Current  
(V = 10 Vdc, I = 0)  
I
EBO  
EB  
C
Semiconductor Components Industries, LLC, 2001  
906  
Publication Order Number:  
March, 2001 – Rev. 2  
MPSW13/D  

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