MMDTX141DW
Complementary NPN / PNP Silicon Epitaxial Planar Digital Transistor
for switching and interface circuit and drivecircuit applications
6
5
4
Features
• Transistors with different polarity and built-in bias
TR2
resistors
TR1
1
• Simplification of circuit design
• Reduces number of components and board space
2
3
TR1: 1.Emitter 2.Base 6.Collector
TR2: 4.Emitter 5.Base 3.Collector
SOT-363 Plastic package
Resistor Values
R1 (KΩ)
10
R2 (KΩ)
10
Absolute Maximum Ratings at Ta = 25℃ (TR1)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
50
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
50
V
10
V
100
mA
Absolute Maximum Ratings at Ta = 25℃ (TR2)
Parameter
Symbol
-VCBO
-VCEO
-VEBO
-IC
Value
50
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
50
V
10
V
100
mA
Absolute Maximum Ratings at Ta = 25℃ (TR1 and TR2)
Parameter
Symbol
Ptot
Value
200
Unit
mW
Total Power Dissipation
Thermal Resistance from Junction to Ambient 1)
RθJA
Tj
625
℃
℃
/W
Junction Temperature
150
Storage Temperature Range
Tstg
- 55 to + 150
℃
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
1 / 5
®
Dated:26/02/2021 Rev: 02