MMDTX141EW-AH
Complementary NPN/PNP Silicon Epitaxial Planar Digital Transistor
5
4
R1
R2
Features
TR2
R2
R1
TR1
• AEC-Q101 Qualified
• Built-in bias resistors
R1=R2=10KΩ
1
3
2
• Ideal for power switch circuits
• Halogen and Antimony Free(HAF),
RoHS compliant
TR1: 1. Emitter 2. Base 5. Collector
TR2: 3. Emitter 5. Base 4. Collector
SOT-353 Plastic package
Absolute Maximum Ratings at Ta = 25
(TR1)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Input Voltage
VCBO
VCEO
VIN
IC
50
50
V
V
- 10 to + 40
50
V
Collector Current
mA
mA
mW
Peak Collector Current
Power Dissipation
ICM
PD
100
150
Junction Temperature
Storage Temperature Range
Tj
150
Tstg
- 55 to + 150
Absolute Maximum Ratings at Ta = 25
(TR2)
Parameter
Symbol
-VCBO
-VCEO
VIN
Value
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Input Voltage
50
50
V
- 40 to + 10
50
V
Collector Current
-IC
mA
mA
mW
Peak Collector Current
Power Dissipation
-ICM
PD
100
150
Junction Temperature
Storage Temperature Range
Tj
150
Tstg
- 55 to + 150
Thermal Characteristics (TR1/TR2)
Parameter
Symbol
RθJA
Max.
833
Unit
/W
Thermal Resistance from Junction to Ambient 1)
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
®
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Dated:26/09/2023 Rev: 02