MMDTX144DW
Complementary NPN/PNP Silicon Epitaxial Planar Digital Transistor
For switching and interface circuit and drivecircuit applications
6
5
4
Features
TR2
• Transistors with different polarity and built-in bias
resistors R1 and R2
TR1
1
• Simplification of circuit design
• Reduces number of components and board space
1. Emitter 2. Base 3. Collector
4. Emitter 5. Base 6. Collector
SOT-363 Plastic Package
2
3
Absolute Maximum Ratings at Ta = 25
(TR1)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
50
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
50
V
6
V
100
mA
Absolute Maximum Ratings at Ta = 25
(TR2)
Parameter
Symbol
-VCBO
-VCEO
-VEBO
-IC
Value
50
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
50
V
6
V
100
mA
Absolute Maximum Ratings at Ta = 25
(TR1 and TR2)
Parameter
Symbol
Ptot
Value
200
Unit
mW
Total Power Dissipation
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
- 55 to + 150
625
Thermal Resistance from Junction to Ambient 1)
1) Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
RθJA
/W
1 / 5
®
Dated: 27/10/2021 Rev: 02