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MMBTA92 PDF预览

MMBTA92

更新时间： 2024-10-28 22:39:43
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管开关光电二极管
页数 文件大小 规格书
2页 53K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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MMBTA92 数据手册

 浏览型号MMBTA92的Datasheet PDF文件第2页 
MMBTA92  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
SOT-23  
·
·
Epitaxial Planar Die Construction  
Complementary NPN Type Available  
(MMBTA42)  
Ideal for Medium Power Amplification and  
Switching  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
C
·
B
B
C
C
TOP VIEW  
B
E
Mechanical Data  
D
D
G
E
E
·
·
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
Marking (See Page 2): K3R  
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approx.)  
H
G
H
K
M
J
·
·
L
J
K
C
L
·
·
·
·
M
a
E
B
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic Symbol  
MMBTA92  
-300  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
-300  
V
Emitter-Base Voltage  
-5.0  
V
Collector Current (Note 1) (Note 3)  
Power Dissipation (Note 1)  
-500  
mA  
mW  
°C/W  
°C  
Pd  
300  
RqJA  
Tj, TSTG  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC = -100mA, IE = 0  
IC = -1.0mA, IB = 0  
-300  
-300  
-5.0  
¾
¾
¾
V
V
IE = -100mA, IC = 0  
VCB = -200V, IE = 0  
VCE = -3.0V, IC = 0  
¾
V
-250  
-100  
nA  
nA  
IEBO  
Collector Cutoff Current  
¾
ON CHARACTERISTICS (Note 2)  
IC = -1.0mA, VCE = -10V  
IC = -10mA, VCE = -10V  
IC = -30mA, VCE = -10V  
25  
40  
25  
hFE  
DC Current Gain  
¾
¾
IC = -20mA, IB = -2.0mA  
IC = -20mA, IB = -2.0mA  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
¾
¾
-0.5  
-0.9  
V
V
VCB = -20V, f = 1.0MHz, IE = 0  
Ccb  
fT  
¾
6.0  
pF  
VCE = -20V, IC = -10mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
50  
¾
MHz  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance  
rating (RqJA), power dissipation rating (Pd) and power derating curve (figure 1).  
DS30060 Rev. 5 - 2  
1 of 2  
MMBTA92  
www.diodes.com  
12

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