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MMBTA92-13 PDF预览

MMBTA92-13

更新时间： 2024-11-20 19:12:03
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
3页 72K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

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MMBTA92-13 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-G3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.07
最大集电极电流 (IC)：0.5 A集电极-发射极最大电压：300 V
配置：SINGLE最小直流电流增益 (hFE)：25
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：235极性/信道类型：PNP
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：10
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：50 MHzBase Number Matches：1

MMBTA92-13 数据手册

 浏览型号MMBTA92-13的Datasheet PDF文件第2页浏览型号MMBTA92-13的Datasheet PDF文件第3页 
SPICE MODEL: MMBTA92  
MMBTA92  
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
·
·
Epitaxial Planar Die Construction  
SOT-23  
Complementary NPN Type Available (MMBTA42)  
Ideal for Medium Power Amplification and Switching  
Available in Lead Free/RoHS Compliant Version (Note 4)  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
A
C
B
B
C
Mechanical Data  
C
TOP VIEW  
B
E
·
·
Case: SOT-23  
D
D
G
E
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
E
H
G
H
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
K
M
J
L
J
Terminals: Solderable per MIL-STD-202, Method 208  
K
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please see Ordering  
Information, Note 6, on Page 2  
C
L
M
·
·
·
Marking (See Page 2): K3R  
a
Ordering & Date Code Information: See Page 2  
Weight: 0.008 grams (approximate)  
E
B
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
MMBTA92  
-300  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
-300  
V
Emitter-Base Voltage  
-5.0  
V
Collector Current (Note 1) (Note 3)  
Power Dissipation (Note 1)  
-500  
mA  
mW  
°C/W  
°C  
Pd  
300  
RqJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
417  
Tj, TSTG  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC = -100mA, IE = 0  
IC = -1.0mA, IB = 0  
E = -100mA, IC = 0  
-300  
-300  
-5.0  
¾
¾
¾
V
V
I
¾
V
VCB = -200V, IE = 0  
VCE = -3.0V, IC = 0  
-250  
-100  
nA  
nA  
IEBO  
Collector Cutoff Current  
¾
ON CHARACTERISTICS (Note 2)  
IC = -1.0mA, VCE = -10V  
IC = -10mA, VCE = -10V  
IC = -30mA, VCE = -10V  
25  
40  
25  
hFE  
DC Current Gain  
¾
¾
IC = -20mA, IB = -2.0mA  
IC = -20mA, IB = -2.0mA  
VCE(SAT)  
VBE(SAT)  
Collector-Emitter Saturation Voltage  
Base- Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
¾
¾
-0.5  
-0.9  
V
V
VCB = -20V, f = 1.0MHz, IE = 0  
Ccb  
fT  
¾
6.0  
pF  
VCE = -20V, IC = -10mA,  
f = 100MHz  
Current Gain-Bandwidth Product  
50  
¾
MHz  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance  
rating (R ), power dissipation rating (P ) and power derating curve (figure 1).  
qJA  
d
4. No purposefully added lead.  
DS30060 Rev. 8 - 2  
1 of 3  
MMBTA92  
www.diodes.com  
ã Diodes Incorporated  
123

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