MMBTA92-7

更新时间： 2024-11-17 22:26:55

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
2页	53K
描述
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MMBTA92-7 数据手册

MMBTA92

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features

SOT-23

Epitaxial Planar Die Construction

Complementary NPN Type Available

(MMBTA42)

Ideal for Medium Power Amplification and

Switching

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

TOP VIEW

Mechanical Data

Case: SOT-23, Molded Plastic

Case material - UL Flammability Rating

Classification 94V-0

Moisture sensitivity: Level 1 per J-STD-020A

Terminals: Solderable per MIL-STD-202,

Method 208

Terminal Connections: See Diagram

Marking (See Page 2): K3R

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic Symbol

MMBTA92

-300

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

-300

Emitter-Base Voltage

-5.0

Collector Current (Note 1) (Note 3)

Power Dissipation (Note 1)

-500

°C/W

°C

P_d

300

R_qJA

T_j, T_STG

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage and Temperature Range

417

-55 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Symbol

Min

Max

Unit

Test Condition

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= -100mA, I_E= 0

I_C= -1.0mA, I_B= 0

-300

-5.0

I_E= -100mA, I_C= 0

V_CB= -200V, I_E= 0

V_CE= -3.0V, I_C= 0

-250

-100

I_EBO

Collector Cutoff Current

ON CHARACTERISTICS (Note 2)

I_C= -1.0mA, V_CE= -10V

I_C= -10mA, V_CE= -10V

I_C= -30mA, V_CE= -10V

h_FE

DC Current Gain

I_C= -20mA, I_B= -2.0mA

V_CE(SAT)

V_BE(SAT)

Collector-Emitter Saturation Voltage

Base- Emitter Saturation Voltage

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

-0.5

-0.9

V_CB= -20V, f = 1.0MHz, I_E= 0

C_cb

f_T

6.0

V_CE= -20V, I_C= -10mA,

f = 100MHz

Current Gain-Bandwidth Product

MHz

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance

rating (R_qJA), power dissipation rating (P_d) and power derating curve (figure 1).

DS30060 Rev. 5 - 2

1 of 2

MMBTA92

www.diodes.com

中文翻译

下载PDF

MMBTA92-7 替代型号

型号	品牌	替代类型	描述	数据表
MMBTA92-7-F	DIODES	类似代替	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

与MMBTA92-7相关器件

型号	品牌	获取价格	描述	数据表
MMBTA92-7-F	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA92-AE3-R	UTC	获取价格	HIGH VOLTAGE PNP TRANSISTOR
MMBTA92-AH	SWST	获取价格	小信号晶体管
MMBTA92-AU	PANJIT	获取价格	SOT-23
MMBTA92E	CJ	获取价格	TRANSISTOR
MMBTA92-E6327	INFINEON	获取价格	Transistor
MMBTA92G	FOSHAN	获取价格	SOT-23
MMBTA92-G	COMCHIP	获取价格	General Purpose Transistor
MMBTA92G-AE3-R	UTC	获取价格	HIGH VOLTAGE PNP TRANSISTOR
MMBTA92HE3	MCC	获取价格	Tape: 3K/Reel , 120K/Ctn;

与MMBTA92-7相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBTA92-7

MMBTA92-7 数据手册

MMBTA92-7 替代型号

与MMBTA92-7相关器件

与MMBTA92-7相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBTA92-7

MMBTA92-7 数据手册

MMBTA92-7 替代型号

与MMBTA92-7相关器件

与MMBTA92-7相关文章

您还可以找

您在本页遇到什么问题？