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MMBTA92E PDF预览

MMBTA92E

更新时间: 2024-11-20 04:09:31
品牌 Logo 应用领域
江苏长电/长晶 - CJ 晶体晶体管
页数 文件大小 规格书
3页 249K
描述
TRANSISTOR

MMBTA92E 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

MMBTA92E 数据手册

 浏览型号MMBTA92E的Datasheet PDF文件第2页浏览型号MMBTA92E的Datasheet PDF文件第3页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
WBFBP-03A Plastic-Encapsulate Transistors  
MMBTA92E  
TRANSISTOR  
C
WBFBP-03A  
DESCRIPTION  
PNP Epitaxial Silicon Transistor  
(1.6×1.6×0.5)  
unit: mm  
TOP  
FEATURES  
Power dissipation PCM : 0.15 W (Tamb=25)  
B
E
E
B
C
1. BASE  
APPLICATION  
High Voltage Amplifier  
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,  
DVD-ROM, Note book PC, etc.)  
2. EMITTER  
3. COLLECTOR  
BACK  
MARKING:2D  
C
2D  
B E  
MAXIMUM RATINGS TA=25unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
-310  
-305  
-5  
V
V
Collector Current -Continuous  
Junction Temperature  
Storage Temperature  
-300  
150  
mA  
TJ  
/W  
/W  
Tstg  
RӨJA  
RӨJC  
-55-150  
200  
Thermal Resistance, junction to Ambient  
Thermal Resistance, unction to Case  
83.3  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
MIN  
-310  
-305  
-5  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
IC= -100µA, IE=0  
IC= -1mA, IB=0  
V
IE= -100µA, IC=0  
VCB=-200V, IE=0  
VCE=-200V, IB=0  
VCE=-300V, IB=0  
VEB= -5V, IC=0  
-0.25  
-0.25  
-5  
µA  
µA  
µA  
µA  
Collector cut-off current  
Emitter cut-off current  
I CEO  
IEBO  
-0.1  
hFE(1)  
hFE(2)  
hFE(3)  
VCE= -10V, IC= -1mA  
VCE= -10V, IC=-10mA  
VCE= -10V, IC=-30mA  
IC=-20 mA, IB= -2mA  
IC= -20 mA, IB= -2mA  
VCE=-20V, IC= -10mA  
f=30MHz  
60  
100  
60  
DC current gain  
200  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
V
CE(sat)  
BE(sat)  
-0.2  
-0.9  
V
V
V
Transition frequency  
50  
MHz  
fT  

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