Datasheet > MMBTA92_11

MMBTA92_11

更新时间： 2024-11-18 10:52:23

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管高压
页数	文件大小	规格书
3页	232K
描述
PNP Silicon High Voltage Transistor

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MMBTA92_11 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

MMBTA92

Features

•

Surface Mount SOT-23 Package

PNP Silicon High

Voltage Transistor

Capable of 300mWatts of Power Dissipation

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking: 2D

SOT-23

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

Collector-Emitter Breakdown Voltage*

(I_C=-1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=-100µAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=-100µAdc, I_C=0)

-300

-5

Vdc

I_C

Collector Current-Continuous

-300

mAdc

nAdc

I_CBO

Collector Cutoff Current

(V_CB=-200Vdc, I_E=0)

Emitter Cutoff Current

(V_EB=-5Vdc, I_C=0)

-250

-100

I_EBO

nAdc

ON CHARACTERISTICS

DIMENSIONS

h_FE

DC Current Gain*

INCHES

MIN

(I_C=-1.0mAdc, V_CE=-10Vdc)

(I_C=-10mAdc, V_CE=-10Vdc)

(I_C=-30mAdc, V_CE=-10Vdc)

Collector-Emitter Saturation Voltage

(I_C=-20mAdc, I_B=-2.0mAdc)

100

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

NOTE

200

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

V_CE(sat)

V_BE(sat)

-0.2

-0.9

Vdc

Base-Emitter Saturation Voltage

(I_C=-20mAdc,I_B=-2.0mAdc)

SMALL-SIGNAL CHARACTERISTICS

.085

.37

f_T

Current Gain-Bandwidth Product

(I_C=-10mAdc, V_CE=-20Vdc, f=30MHz)

Collector-Base Capacitance

(V_CB=-20Vdc, I_E=0, f=1.0MHz)

MHz

C_cb

6.0

Suggested Solder

Pad Layout

THERMAL CHARACTERISTICS

.031

.800

Characteristic

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board,

225

.035

.900

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

.079

inches

2.000

Thermal Resistance, Junction to Ambient

qJA

Total Device Dissipation

(2)

Alumina Substrate,

T = 25°C

.037

.950

Derate above 25°C

2.4

mW/°C

°C/W

°C

.037

.950

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

417

qJA

T , T

J stg

–55 to +150

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Revision: A

2011/01/01

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与MMBTA92_11相关器件

型号	品牌	获取价格	描述	数据表
MMBTA92_15	DIODES	获取价格	300V PNP SMALL SIGNAL TRANSISTOR IN SOT23
MMBTA92_15	KEXIN	获取价格	PNP Transistors
MMBTA92_15	UTC	获取价格	HIGH VOLTAGE PNP TRANSISTOR
MMBTA92_2	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA92-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, PLASTI
MMBTA92-13-F	DIODES	获取价格	300V PNP SMALL SIGNAL TRANSISTOR IN SOT23
MMBTA92-3_15	KEXIN	获取价格	PNP Transistors
MMBTA92-7	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA92-7-F	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA92-AE3-R	UTC	获取价格	HIGH VOLTAGE PNP TRANSISTOR

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