Datasheet > MMBTA92

MMBTA92

更新时间： 2024-10-29 10:52:23

品牌	Logo	应用领域
SECOS		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	320K
描述
General Purpose Transistor

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中文翻译

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MMBTA92 数据手册

MMBTA92

PNP Silicon

Elektronische Bauelemente

General Purpose Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

SOT-23

Min

FEATURES

Dim

Max

Pb-free is available.

2.800 3.040

1.200 1.400

0.890 1.110

0.370 0.500

1.780 2.040

0.013 0.100

0.085 0.177

0.450 0.600

0.890 1.020

2.100 2.500

0.450 0.600

Power dissipation & Collector current

Pcm: 0.3W Icm: -0.3A

High voltage V(BR): -300V

COLLECTOR

Top View

BASE

All Dimension in mm

EMITTER

ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Symbol

Test

conditions

I_E=0

MIN

MAX

UNIT

Ic= -100uA

-300

-5

，

(BR)CBO

Ic= -1 mA

I_B=0

，

(BR)CEO

I = -100XA I_C=0

，

(BR)EBO

I_CBO

V_CB=-200 V , I_E=0

V_EB= -5V, I_C=0

-0.25

-0.1

Emitter cut-off current

I_EBO

H_FE（1）

V_CE= -10V, I_C= - 1mA

V_CE= -10V, I_C=-10mA

V_CE=-10V, I_C=-30mA

100

DC current gain

H_FE（2）

H_FE（3）

200

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat) I_C=-20 mA, I_B= -2mA

-0.2

-0.9

V_BE(sat)

f_T

I_C= -20 mA, I_B=-2mA

V_CE=-20V, I_C=-10mA

Transition frequency

MHz

f=30MHz

DEEVVIICCEE MMAARRKKIINNGG

MMBTA92=2D

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2004 Rev.B

Page 1 of 2

中文翻译

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