MMBTA55

更新时间： 2024-11-10 17:32:35

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
4页	269K
描述
Package / Case : SOT-23;Mounting Style : SMD/SMT;Power Rating : 0.225 W;Transistor Polarity : PNP;VCEO : 60 V;VCBO : 60 V;VEBO : 4 V;Max Collector Current : 0.1 A;DC Collector/Base Gain hfe Min : 100

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MMBTA55 数据手册

MMBTA56

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(PNP)

FEATURES

* Power dissipation

PCM :

* Collector current

ICM :

0.225

-0.5

W(Tamb=25^OC)

* Collector-base voltage

-80

* Operating and storage junction temperature range

T ,Tstg:

-55^OC to +150^OC

CBO

SOT-23

COLLECTOR

MECHANICAL DATA

BASE

0.055(1.40)

Case: Molded plastic

0.047(1.20)

EMITTER

Epoxy: UL 94V-O rate flame retardant

Lead: MIL-STD-202E method 208C guaranteed

Mounting position: Any

0.006(0.15)

0.043(1.10)

0.035(0.90)

0.003(0.08)

0.020(0.50)

0.012(0.30)

0.004(0.10)

0.000(0.00)

Weight: 0.008 gram

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25^oC ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

0.118(3.00)

0.110(2.80)

0.019(2.00)

0.071(1.80)

Dimensions in inches and (millimeters)

ELECTRICAL CHARACTERISTICS ( @ TA = 25^oC unless otherwise noted )

CHARACTERISTICS

Collector - Base Breakdown Voltage (I =-100 uA, I =0)

SYMBOL

MIN

-80

TYP

MAX

UNITS

V(BR)CBO

Collector - Emitter Breakdown Voltage(IC= -1mA, IB=0)

V(BR)CEO

V(BR)EBO

-80

-4

Emitter - Base Breakdown Voltage (I = -100 uA, I = 0)

Collector Cut - Off Current (VCB= -80V, IE=0)

Collector Cut - Off Current (VCE= -60V, IB=0)

DC Current Gain(VCE= -1V, IC= -100mA)

ICBO

ICEO

-0.1

hFE

100

Collector - Emitter Saturation Voltage(IC= -100 mA, IB= -10mA)

Base - Emitter on Voltage(V =-1V,I =-100mA)

VCE(sat)

-0.25

VBE(on)

-1.2

Transition Frequency(VCE= -1V, IC= -100mA, f =100MHz)

MHz

Marking

2GM

2007-3

Note: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.

12 3 4

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