Datasheet > MMBTA55_05

MMBTA55_05

更新时间： 2024-02-22 15:15:31

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	39K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

获取价格

数据手册

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MMBTA55_05 数据手册

SEMICONDUCTOR

MMBTA55

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

AUDIO FREQUENCY AMPLIFIER APPLICATIONS.

FEATURES

Complementary to MMBTA05.

Driver Stage Application of 20 to 25 Watts Amplifiers.

DIM MILLIMETERS

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

SYMBOL

RATING

-60

UNIT

0.20 MIN

1.00+0.20/-0.10

V_CBO

V_CEO

V_EBO

I_C

-60

-5

-500

500

1. EMITTER

2. BASE

I_E

Emitter Current

3. COLLECTOR

P_C*

T_j

Collector Power Dissipation

Junction Temperature

Storage Temperature

350

150

SOT-23

T_stg

-55 150

* : Package Mounted On 99.5% Alumina 10

0.6mm.

Marking

Lot No.

Type Name

AMX

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP. MAX.

UNIT

V_CB=-60V, I_E=0

-100

I_CEO

V_CE=-60V, I_B=0

Emitter Cut-off Current

-100

V_(BR)CEO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

I_C=-5mA, I_B=0

Collector-Emitter Breakdown Voltage

-60

100

V_CE=-1V, I_C=-10mA

V_CE=-1V, I_C=-100mA

I_C=-100mA, I_B=-10mA

V_CE=-1V, I_C=-100mA

V_CB=-10V, I_E=0, f=1MHz

DC Current Gain

-0.25

-1.2

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

f_T

Transition Frequency

MHz

C_ob

Collector Output Capacitance

2005. 6. 28

Revision No : 3

1/2

中文翻译

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