Datasheet > MMBTA55_11

MMBTA55_11

更新时间： 2024-09-25 10:52:27

品牌	Logo	应用领域
美微科 - MCC		放大器
页数	文件大小	规格书
4页	219K
描述
PNP General Purpose Amplifier

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中文翻译

获取价格

数据手册

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MMBTA55_11 数据手册

M C C

MMBTA55

THRU

MMBTA56

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

This device is designed for general purpose amplifier applications at

collector current to 300mA

PNP General

•

Purpose Amplifier

•

Markin : MMBTA55=2H/B55, MMBTA56=2GM/B56

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Maximum Ratings

Symbol

SOT-23

Rating

Unit

V_CEO

Collector-Emitter Voltage

MMBTA55

MMBTA56

V_CBO

Collector-Base Voltage

MMBTA55

MMBTA56

V_EBO

I_C

T_J

Emitter-Base Voltage

4.0

500

-55 to +150

Collector Current, Continuous

Operating Junction Temperature

Storage Temperature

^OC

T_STG

Thermal Characteristics

Symbol

Rating

Max

225

1.8

Unit

P_D

Total Device Dissipation*

Derate above 25^OC

mW/ ^OC

DIMENSIONS

R_JA

Thermal Resistance, Junction to Ambient

556

^OC/W

INCHES

MIN

DIM

MAX

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

Electrical Characteristics @ 25^OC Unless Otherwise Specified

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage ⁽¹⁾

(I_C=1.0mAdc, I_B=0)

MMBTA55

MMBTA56

---

Vdc

.100

1.12

.180

.51

.085

.37

V_(BR)EBO

Emitter-Base Breakdown Voltage

(I_E=100ì Adc, I_C=0)

4.0

---

Suggested Solder

Pad Layout

Collector Cutoff Current

CBO

(V_CB=60Vdc, I =0)

MMBTA55

MMBTA56

---

0.1

uAdc

(V_CB=80Vdc, I =0)

.031

.800

I_CES

Emitter Cutoff Current

(V_CE=60Vdc, I =0)

---

0.1

uAdc

.035

.900

ON CHARACTERISTICS

.079

2.000

h_FE

DC Current Gain

(V_CE=1.0Vdc, I =10mAdc)

(V_CE=1.0Vdc, I =100mA)

inches

100

---

V_CE(sat)

V_BE(on)

f_T

Collector-Emitter Saturation Voltage

(I_C=100mAdc, I_B=10mAdc)

Base-Emitter On Voltage

---

0.25

1.2

---

Vdc

MHz

.037

.950

.037

.950

(I_C=100mAdc, V_CE=1.0Vdc)

Current-Gain—Bandwidth Product⁽²⁾

(I_C=100mAdc, V_CE=1.0Vdc, f=100MHz)

www.mccsemi.com

1 of 4

Revision: A

2011/01/01

12 3 4

中文翻译

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与MMBTA55_11相关器件

型号	品牌	获取价格	描述	数据表
MMBTA55_15	DIODES	获取价格	PNP SMALL SIGNAL TRANSISTOR IN SOT23
MMBTA55_15	UTC	获取价格	PNP MMBTA55
MMBTA55_2	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA55-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
MMBTA55-7	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA55-7-F	DIODES	获取价格	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBTA55-AU	PANJIT	获取价格	NPN AND PNP HIGH VOLTAGE TRANSISTOR
MMBTA55G-AE3-R	UTC	获取价格	PNP MMBTA55
MMBTA55G-AL3-R	UTC	获取价格	Small Signal Bipolar Transistor
MMBTA55L99Z	TI	获取价格	PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB

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