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MMBTA55 PDF预览

MMBTA55

更新时间: 2024-11-09 04:39:27
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 晶体晶体管光电二极管
页数 文件大小 规格书
3页 144K
描述
PNP General Purpose Transistor

MMBTA55 数据手册

 浏览型号MMBTA55的Datasheet PDF文件第2页浏览型号MMBTA55的Datasheet PDF文件第3页 
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBTA55/A56  
FEATURES  
Pb  
Lead-free  
z
Epitaxial planar die construction.  
Complementary NPN types available  
(MMBTA05/MMBTA06)  
z
APPLICATIONS  
z
Ideal for medium NPN amplification and switching.  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
Package Code  
MMBTA55  
MMBTA56  
2H  
2GM  
SOT-23  
SOT-23  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
MMBTA55  
MMBTA56  
-80  
UNIT  
VCBO  
collector-base voltage  
-60  
V
VCEO  
VEBO  
IC  
collector-emitter voltage  
-60  
-80  
V
emitter-base voltage  
-4  
-0.5  
V
collector current (DC)  
A
PC  
Collector dissipation  
0.35  
W
RθJA  
Tj ,Tstg  
Thermal Resistance, Junction to Ambient  
junction and storage temperature  
357  
°C/W  
°C  
-55-150  
Document number: BL/SSSTC123  
Rev.A  
www.galaxycn.com  
1

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