Datasheet > MMBTA4XLT1

MMBTA4XLT1

更新时间： 2024-11-05 11:59:31

品牌	Logo	应用领域
威伦 - WILLAS		晶体晶体管
页数	文件大小	规格书
4页	416K
描述
High Voltage Transistors

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MMBTA4XLT1 数据手册

WILLAS

MMBTA4xLT1

HighVoltageTransistors

_ƽRoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Package

Shipping

MMBTA42LT1

SOT-23

3000/Tape&Reel

MMBTA43LT1

M1E

SOT-23

3000/Tape&Reel

SOT–23

MAXIMUM RATINGS

Value

Rating

Symbol

M MBTA42 M MBTA43

Unit

Vdc

COLLECTOR

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

300

6.0

200

6.0

CBO

EBO

Vdc

BASE

Vdc

Collector Current — Continuous

500

mAdc

EMITTER

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

= 25°C

225

Derate above 25°C

1.8

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

θJA

556

300

Alumina Substrate, (2) T

= 25°C

Derate above 25°C

2.4

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

417

, T ^stg

–55 to +150

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(3)

V _(BR)CEO

Vdc

(I _C= 1.0 mAdc, I _B= 0)

M MBTA42

M MBTA43

300

200

—

Collector–Base Breakdown Voltage

V _(BR)CBO

Vdc

(I _C= 100 µAdc, I _E= 0)

M MBTA42

M MBTA43

300

200

—

Emitter–Base Breakdown Voltage

(I _E= 100 µAdc, I _C= 0)

V _(BR)EBO

I _CBO

6.0

—

Vdc

Collector Cutoff Current

( V _CB= 200Vdc, I _E= 0)

( V _CB= 160Vdc, I _E= 0)

Emitter Cutoff Current

( V _EB= 6.0Vdc, I _C= 0)

µAdc

M MBTA42

M MBTA43

—

0.1

I _EBO

µAdc

M MBTA42

M MBTA43

—

0.1

( V _EB= 4.0Vdc, I _C= 0)

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width 300 µs, Duty Cycle <2.0%.

2012-11

WILLAS ELECTRONIC CORP.

12 3 4

中文翻译

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