Datasheet > MMBT9013LT1

MMBT9013LT1

更新时间： 2024-09-10 12:36:43

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
2页	152K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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MMBT9013LT1 数据手册

RoHS

M M B T 9 0 1 3 L T 1

NPN EPITAXIAL SILICON TRANSISTOR

SOT-23

1W OUTPUT AMPLIFIER OF PORTABLE

RADIOS IN CLASS

B PUSH-PULL OPERATION

1.BASE

Complement to 9012

2.EMITTER

Collector Current :Ic=500mA

High Total Power Dissipation Pc=225mW

2.4

1.3

3.COLLECTOR

Unit:mm

(Ta=25^oC)

ABSOLUTE MAXIMUM RATINGS

Symbol

Rating

Unit

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

EBO

Emitter-Base Voltage

Collector Current

Collector Dissipation Ta=25^oC*

Junction Temperature

Storage Temperature

500

225

150

-55~150

^OC

stg

(Ta=25^oC)

Electrical Characteristics

Parameter

Symbol MIN. TYP.MAX. Unit

Condition

BVCBO

BVCEO

BVEBO

=100 A I

=1mA I =0

=100 A I =0

CB=25V, V =0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage#

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

DC Current Gain

CBO

100

300

EBO

CB=3V, I

CE=1V, I

FE1

=50mA

120

FE2

DC Current Gain

=500mA

CE(sat)

BE(sat)

BE(on)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

0.6

1.2

0.7

=500mA, I

=50mA

0.18

0.95

0.67

0.6

=1V, I =10mA

*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC

Pulse Test: Pulse Width 300uS Duty cycle 2%

WEJ ELECTRONIC CO.,LTD

DEVICE MARKING:

9013=K6

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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