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MMBT9015 PDF预览

MMBT9015

更新时间: 2024-09-14 04:39:27
品牌 Logo 应用领域
友顺 - UTC 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
3页 110K
描述
PNP EPITAXIAL SILICON TRANSISTOR

MMBT9015 技术参数

生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.71
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):60JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):190 MHz
Base Number Matches:1

MMBT9015 数据手册

 浏览型号MMBT9015的Datasheet PDF文件第2页浏览型号MMBT9015的Datasheet PDF文件第3页 
UTC MMBT9015  
PNP EPITAXIAL SILICON TRANSISTOR  
PRE-AMPLIFIER, LOW LEVEL &  
LOW NOISE  
FEATURES  
*High total power dissipation. (450mW)  
*Excellent hFE linearity.  
*Complementary to UTC MMBT9014  
2
1
MARKING  
3
15  
SOT-23  
1: EMITTER 2: BASE 3: COLLECTOR  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
RATING  
-50  
UNIT  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Collector dissipation  
Junction Temperature  
Storage Temperature  
-45  
-5  
-100  
225  
V
mA  
mW  
°C  
Pc  
Tj  
TSTG  
150  
-55 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
SYMBOL  
BVCBO  
BVCEO  
BVEBO  
ICBO  
TEST CONDITIONS  
Ic=-100µA, IE=0  
MIN TYP MAX UNIT  
-50  
-45  
-5  
V
V
V
nA  
nA  
Ic=-1mA, IB=0  
IE=-100µA, Ic=0  
VCB=-50V, IE=0  
VEB=-5V, IC=0  
-50  
-100  
600  
-0.7  
Emitter cutoff current  
IEBO  
DC current gain  
hFE  
VCE=-5V, Ic=-1mA  
Ic=-100mA, IB=-5mA  
Ic=-100mA, IB=-5mA  
VCE=-5V, Ic=-2mA  
VCB=-10V, IE=0, f=1MHz  
VCE=-5V, Ic=-10mA  
VCE=-5V, Ic=-0.2mA  
f=1KHz, Rs=1KΩ  
60  
200  
-0.2  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter on voltage  
Output Capacitance  
Current gain-Bandwidth Porduct  
Noise Figure  
VCE(sat)  
VBE(sat)  
VBE(on)  
Cob  
fT  
NF  
V
V
V
-0.82 -1.0  
-0.6 -0.65 -0.75  
4.5  
190  
0.7  
7.0  
pF  
MHz  
dB  
100  
10  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R206-023,A  

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