Datasheet > MMBT9018H

MMBT9018H

更新时间： 2024-11-05 05:49:19

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
3页	203K
描述
NPN Silicon Epitaxial Planar Transistor

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中文翻译

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数据手册

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MMBT9018H 数据手册

MMBT9018G / MMBT9018H

NPN Silicon Epitaxial Planar Transistor

for AM/FM amplifier and local oscillator of

FM/VHF tuner applications

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

Power Dissipation

P_tot

T_j

200

Junction Temperature

Storage Temperature Range

150

T_S

- 55 to + 150

Electrical Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V_CE= 5 V, I_C= 1 mA

MMBT9018G

MMBT9018H

h_FE

105

190

Collector Base Breakdown Voltage

at I_C= 100 µA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Collector Emitter Breakdown Voltage

at I_C= 1 mA

Emitter Base Breakdown Voltage

at I_E= 100 µA

Collector Cutoff Current

at V_CB= 12 V

0.5

Collector Emitter Saturation Voltage

at I_C= 10 mA, I_B= 1 mA

V_CE(sat)

f_T

Gain Bandwidth Product

at V_CE= 5 V, I_C= 5 mA

700

1100

1.3

MHz

Collector Base Capacitance

at V_CB= 10 V, f = 1 MHz

C_CBO

1.7

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 20/02/2006

12 3

中文翻译

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