Datasheet > MMBT9014LT1

MMBT9014LT1

更新时间： 2024-09-14 12:06:03

品牌	Logo	应用领域
永而佳 - WINNERJOIN		晶体晶体管
页数	文件大小	规格书
2页	150K
描述
NPN EPITAXIAL SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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MMBT9014LT1 数据手册

RoHS

M M B T 9 0 1 4 L T 1

NPN EPITAXIAL SILICON TRANSISTOR

SOT-23

PRF-AMPLIFIER,LOW LEVEL&LOW NOISE

Complemen to MMPT9015LT1

Collector-current:Ic=100mA

Collector-Emiller Voltage:VCE=45V

High Totalpower Dissipation Pc=225mW

High life And Good Linearity

1.BASE

2.EMITTER

2.4

1.3

3.COLLECTOR

Unit:mm

(Ta=25^oC)

ABSOLUTE MAXIMUM RATINGS

Symbol

Rating

Unit

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

EBO

Emitter-Base Voltage

Collector Current

Collector Dissipation Ta=25^oC*

Junction Temperature

Storage Temperature

100

225

150

-55~150

^OC

stg

(Ta=25^oC)

Electrical Characteristics

Parameter

Symbol MIN. TYP.MAX. Unit

Condition

BVCBO

BVCEO

BVEBO

=100 A I

=1mA I =0

=100 A I =0

CB=50V, V =0

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage#

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

DC Current Gain

CBO

EBO

CB=5V, I

CE=5V, I

1000

0.3

=1mA

60 300

CE(sat)

BE(sat)

BE(on)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter on Voltage

=100mA, I

=5mA

1.00

6.7

0.63

2.2

=5V, I

=2mA

=10mA,f=100MHz

0.58

150

Output Capacitance

3.5

MHz

CB=10V, I

Current Gain-Bandwidth Product

270

CE=5V I

=10mA

=0.2mA

Noise Figure

WEJ ELECTRONIC CO.,LTD

f=1MHz Rs=2Kohm

*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC

^#Pulse Test: Pulse Width 300uS Duty cycle 2%

DEVICE MARKING:

MMBT9014LT1=L6

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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