Datasheet > MMBT9015

MMBT9015

更新时间： 2024-09-14 05:49:19

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	196K
描述
PNP Silicon Epitaxial Planar Transistors

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数据手册

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MMBT9015 数据手册

MMBT9015

PNP Silicon Epitaxial Planar Transistors

for switching and AF amplifier applications

As complementary types the NPN

transistor MMBT9014 is recommended.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

100

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at -V_CE= 5 V, -I_C= 1 mA

MMBT9015B

MMBT9015C

MMBT9015D

h_FE

125

220

420

250

475

800

Collector Cutoff Current

at -V_CB= 50 V

Emitter Cutoff Current

at -V_EB= 5 V

Collector Base Breakdown Voltage

at -I_C= 100 µA

Collector Emitter Breakdown Voltage

at -I_C= 1 mA

-I_CBO

-I_EBO

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE(sat)

f_T

Emitter Base Breakdown Voltage

at -I_E= 100 µA

Collector Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 5 mA

Base Emitter Saturation Voltage

at -I_C= 100 mA, -I_B= 5 mA

Gain Bandwidth Product

at -V_CE= 5 V, -I_C= 10 mA

Output Capacitance

at -V_CB= 10 V, f = 1 MHz

Noise Figure

at -V_CE= 5 V, -I_C= 200 µA, f = 1 KHz, R_G= 2 KΩ

0.65

100

MHz

C_OB

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 13/08/2007

中文翻译

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