Datasheet > MMBT8550C

MMBT8550C

更新时间： 2024-11-06 01:17:39

品牌	Logo	应用领域
松钜 - BYTESONIC		/
页数	文件大小	规格书
3页	416K
描述
PNP Silicon Epitaxial Planar Transistor

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中文翻译

获取价格

数据手册

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MMBT8550C 数据手册

MMBT8550

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications.

As complementary type the NPN transistor

MMBT8050 is recommended.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

-V_CBO

-V_CEO

-V_EBO

-I_C

600

Power Dissipation

P_tot

350

Junction Temperature

Storage Temperature Range

T_j

150

T_S

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -V_CE= 1 V, -I_C= 100 mA

MMBT8550C

MMBT8550D

h_FE

100

160

250

400

at -V_CE= 1 V, -I_C= 500 mA

Collector Base Cutoff Current

at -V_CB= 35 V

Collector Base Breakdown Voltage

at -I_C= 10 µA

Collector Emitter Breakdown Voltage

at -I_C= 2 mA

Emitter Base Breakdown Voltage

at -I_E= 100 µA

Collector Emitter Saturation Voltage

at -I_C= 500 mA, -I_B= 50 mA

Base Emitter Saturation Voltage

at -I_C= 500 mA, -I_B= 50 mA

Gain Bandwidth Product

at -V_CE= 5 V, -I_C= 10 mA

-I_CBO

-V_(BR)CBO

-V_(BR)CEO

-V_(BR)EBO

-V_CE(sat)

-V_BE(sat)

f_T

100

0.5

1.2

100

MHz

http://www.bytesonic.com.tw/

Version 1.1

2018/7/3

12 3

中文翻译

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