是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
风险等级: | 5.68 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 96 | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBT9012G-G-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor |
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MMBT9012G-H-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor |
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MMBT9012G-I-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor |
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MMBT9012G-X-AE3-R | UTC |
获取价格 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS |
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MMBT9012H | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |
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MMBT9012I | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |
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MMBT9012L-E-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
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MMBT9012L-F-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
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MMBT9012L-G-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
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MMBT9012L-H-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, |
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