生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 最大集电极电流 (IC): | 0.5 A |
配置: | Single | 最小直流电流增益 (hFE): | 78 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.225 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBT9013-E-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
MMBT9013F | UTC |
获取价格 |
Transistor | |
MMBT9013-F-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
MMBT9013G | UTC |
获取价格 |
Transistor | |
MMBT9013-G-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
MMBT9013G-D-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN | |
MMBT9013G-E-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN | |
MMBT9013G-G-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN | |
MMBT9013G-X-AE3-R | UTC |
获取价格 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION | |
MMBT9013H | UTC |
获取价格 |
暂无描述 |