Datasheet > MMBT9013-AH

MMBT9013-AH

更新时间： 2023-12-06 20:03:08

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	944K
描述
小信号晶体管

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中文翻译

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数据手册

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MMBT9013-AH 数据手册

MMBT9013-AH

NPN Silicon Epitaxial Planar Transistor

As complementary types the PNP transistor

MMBT9012 is recommended.

Features

• AEC-Q101 Qualified

1.Base 2.Emitter 3.Collector

• Halogen and Antimony Free(HAF), RoHS compliant

SOT-23 Plastic Package

Applications

• For switching and amplifier applications.

Absolute Maximum Ratings (T_a= 25 )

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

500

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

1 / 5

Dated:16/02/2022 Rev: 01

12 3 4 5

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