生命周期: | Active | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.22 |
Is Samacsys: | N | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 64 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBT9013E | UTC |
获取价格 |
Transistor | |
MMBT9013-E-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
MMBT9013F | UTC |
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Transistor | |
MMBT9013-F-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
MMBT9013G | UTC |
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Transistor | |
MMBT9013-G-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
MMBT9013G-D-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN | |
MMBT9013G-E-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN | |
MMBT9013G-G-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN | |
MMBT9013G-X-AE3-R | UTC |
获取价格 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION |