Datasheet > MMBT9012W

MMBT9012W

更新时间： 2024-11-10 14:55:39

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
4页	733K
描述
小信号晶体管

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中文翻译

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数据手册

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MMBT9012W 数据手册

MMBT9012W

PNP Silicon Epitaxial Planar Transistor

The transistor is subdivided into three groups, G, H

and L, according to its DC current gain

Applications

• For general small signal amplifier

Absolute Maximum Ratings (T_a= 25

Parameter

)

Symbol

-V_CBO

-V_CEO

-V_EBO

-I_C

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 4

Dated：02/03/2023 Rev: 02

12 3 4

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MMBT9013	UTC	获取价格	1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
MMBT9013	SEMTECH	获取价格	NPN Silicon Epitaxial Planar Transistors
MMBT9013	SWST	获取价格	小信号晶体管
MMBT9013_11	UTC	获取价格	1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
MMBT9013_15	UTC	获取价格	1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS
MMBT9013-AH	SWST	获取价格	小信号晶体管
MMBT9013-D-AE3-R	UTC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
MMBT9013E	UTC	获取价格	Transistor
MMBT9013-E-AE3-R	UTC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
MMBT9013F	UTC	获取价格	Transistor