Datasheet > MMBT9013

MMBT9013

更新时间： 2024-02-11 10:37:25

品牌	Logo	应用领域
商升特 - SEMTECH		晶体晶体管
页数	文件大小	规格书
2页	237K
描述
NPN Silicon Epitaxial Planar Transistors

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中文翻译

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数据手册

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MMBT9013 数据手册

MMBT9013

NPN Silicon Epitaxial Planar Transistors

for switching and amplifier applications.

As complementary types the PNP transistor

MMBT9012 is recommended.

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

500

Collector Current

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at V_CE= 1 V, I_C= 50 mA

Current Gain Group

h_FE

100

160

250

400

at V_CE= 1 V, I_C= 500 mA

Collector Base Cutoff Current

at V_CB= 35 V

Emitter Base Cutoff Current

at V_EB= 5 V

Collector Bae Breakdown Voltage

at I_C= 100 μA

Collector Emitter Breakdown Voltage

at I_C= 1 mA

I_CBO

I_EBO

100

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

V_CE(sat)

V_BE(sat)

V_BE

Emitter Base Breakdown Voltage

at I_E= 100 μA

Collector Emitter Saturation Voltage

at I_C= 500 mA, I_B= 50 mA

Base Emitter Saturation Voltage

at I_C= 500 mA, I_B= 50 mA

Base Emitter Voltage

at V_CE= 1 V, I_C= 100 mA

Gain Bandwidth Product

at V_CE= 6 V, I_C= 20 mA

0.6

1.2

f_T

100

MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 15/04/2009

中文翻译

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