Datasheet > MMBT9011

MMBT9011

更新时间： 2024-11-06 14:53:47

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	216K
描述
小信号晶体管

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中文翻译

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数据手册

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MMBT9011 数据手册

MMBT9011

NPN Silicon Epitaxial Planar Transistor

Features

• The transistor is subdivided into two groups, G and

H, according to its DC current gain

1. Base 2. Emitter 3. Collector

SOT-23 Plastic Package

Applications

• For switching and AF amplifier applications

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

℃

Power Dissipation

P_tot

200

Junction Temperature

Storage Temperature Range

T_j

150

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

625

Unit

Thermal Resistance from Junction to Ambient ¹⁾

℃/W

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

1 / 5

Dated: 16/08/2023 Rev: 02

12 3 4 5

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