生命周期: | Active | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.68 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 20 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 64 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 0.225 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MMBT9012E | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
MMBT9012F | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
MMBT9012G-D-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
MMBT9012G-F-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
MMBT9012G-G-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
MMBT9012G-H-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor | |
MMBT9012G-I-AE3-R | UTC |
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Small Signal Bipolar Transistor | |
MMBT9012G-X-AE3-R | UTC |
获取价格 |
1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS | |
MMBT9012H | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, | |
MMBT9012I | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |