Datasheet > MMBT8550D

MMBT8550D

更新时间： 2024-11-06 00:29:43

品牌	Logo	应用领域
松钜 - BYTESONIC		/
页数	文件大小	规格书
3页	446K
描述
TRANSISTORï¼PNPï¼

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中文翻译

获取价格

数据手册

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MMBT8550D 数据手册

MMBT8550D

TRANSISTOR（PNP）

SOT-23

FEATURES

for switching and amplifier applications.

1．BASE

2．EMITTER

3．COLLECTOR

As complementary type the NPN transistor

MMBT8050 is recommended.

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

-40

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

-25

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-1.5

0.3

P_C

℃

T_j

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C=-100µA I_E=0

I_C=-0.1mA, I_B=0

I_E=-100µA I_C=0

MIN

-40

-25

-5

MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_CB=-40V, I_E=0

-0.1

350

µA

I_CEO

V_CE=-20V, I_B=0

Collector cut-off current

I_EBO

V_EB=-5V, I_C=0

Emitter cut-off current

200

h_FE(1)

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-800mA

I_C=-800mA, I_B=-80mA

I_C=-1V, V_CE=-10mA

DC current gain

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE(on)

V_BEF

-0.5

-1.2

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter on voltage

I_B=-1A

-1.55

Base-emitter positive favor voltage

V_CE= -10V, I_C= -50mA

f=30MHz

f_T

100

MHz

Transition frequency

output capacitance

C_ob

(V_CB=-10V,I_E=0,f=1MHz)

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Version 1.1

2018/7/3

12 3

中文翻译

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