Datasheet > MMBT8550LT1_15

MMBT8550LT1_15

更新时间： 2024-11-06 01:24:03

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
2页	144K
描述
PNP EPITAXIAL SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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MMBT8550LT1_15 数据手册

RoHS

M M B T 8 5 5 0 L T 1

PNP EPITAXIAL SILICON TRANSISTOR

SOT-23

2W OUTPUT AMPLIFIER OF PORTABLE

RADIOS IN CLASS

B PUSH-PULL OPERATION

Complement to MMPT8050LT1

Collector-current:Ic=-500mA

1.BASE

2.EMITTER

High Total Power Dissipation:Pc=225mW

2.4

1.3

3.COLLECTOR

Unit:mm

(Ta=25^oC)

ABSOLUTE MAXIMUM RATINGS

Symbol

Rating

Unit

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

CBO

CEO

-40

-25

Emitter-Base Voltage

Collector Current

Collector Dissipation Ta=25^oC*

Junction Temperature

Storage Temperature

-6

-500

225

^OC

150

stg

-55-150

(Ta=25^oC)

Electrical Characteristics

Characteristic

Symbol MIN. TYP. MAX. Unit

Condition

=-100uA I =0

=-1mA I =0

=-100uA I =0

CB=-35V, I =0

-40

-25

-6

BVCBO

BVCEO

BVEBO

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage#

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

DC Current Gain

CBO

-100 nA

EBO

EB=-6V, I

CE=-1V, I

FE1

FE2

FE3

=-5mA

45 170

85 160

30 80

-0.28

DC Current Gain

=-50mA

=-500mA

300

DC Current Gain

-0.6

CE(sat)

BE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Output Capacitance

=-500mA, I

=-50mA

-1.2

-0.98

CE=-1mA, I

=-10mA

-0.66

CB=-10V, I

CE=-10V, I

=0,f=1MHz

=-50mA

Current Gain-Bandwidth Product

MHz

100

200

WEJ ELECTRONIC CO.,LTD

*Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25^oC

^#Pulse Test: Pulse Width 300uS Duty cycle 2%

DEVICE MARKING:

MMBT8550LT1=B6

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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