Datasheet > MMBT4401LT1_15

MMBT4401LT1_15

更新时间： 2024-01-01 23:58:02

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
2页	153K
描述
NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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MMBT4401LT1_15 数据手册

RoHS

M M B T 4 4 0 1 L T 1

TRANSISTOR (NPN)

Features

SOT-23

Power dissipation

。

P_CM: 0.225 W (Tamb=25 C)

Pluse Drain

I_CM: 0.6 mA

Reverse Voltage

V_(BR)CBO: 60V

1.BASE

Operating and storage junction temperature range

T_j, T_stg: -55^。C to +150^。C

2.EMITTER

2.4

1.3

3.COLLECTOR

Unit:mm

(Ta=25^。C)

Electrical Characteristics

Characteristic

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

Test Condition

IC=100 A, IE=0

IC=1 mA, IB=0

Min. Typ. Max. Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

IE=100 A, IC=0

VCB=50V, IE=0

0.1

300

Collector Cut-off Current

ICEO

VCB=35V, IB=0

Emitter Cut-off Current

VEB=5V, IC=0

IEBO

VCE=1V, IC=150mA

VCE=2, IC=500mA

IC=150mA, IB=15mA

H^FE(1)

HFE(2)

100

DC Current Gain (Note)

Collector-Emitter Saturation Voltage

Base-emitter saturatio voltage

0.4

VCE(sat)

VBE(sat)

0.95

=10V, I =20mA ,f=100MHz

Transition Frequency

250

Mhz

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

WEJ ELECTRONIC CO.

中文翻译

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