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MMBT4401LT1_15 PDF预览

MMBT4401LT1_15

更新时间: 2024-01-24 00:28:40
品牌 Logo 应用领域
永而佳 - WINNERJOIN /
页数 文件大小 规格书
2页 153K
描述
NPN TRANSISTOR

MMBT4401LT1_15 数据手册

 浏览型号MMBT4401LT1_15的Datasheet PDF文件第2页 
RoHS  
M M B T 4 4 0 1 L T 1  
TRANSISTOR (NPN)  
Features  
SOT-23  
Power dissipation  
PCM : 0.225 W (Tamb=25 C)  
3
Pluse Drain  
1
ICM : 0.6 mA  
Reverse Voltage  
2
V(BR)CBO : 60V  
1.  
1.BASE  
Operating and storage junction temperature range  
Tj, Tstg : -55C to +150C  
2.EMITTER  
2.4  
1.3  
3.COLLECTOR  
Unit:mm  
(Ta=25C)  
Electrical Characteristics  
Characteristic  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test Condition  
IC=100 A, IE=0  
IC=1 mA, IB=0  
Min. Typ. Max. Unit  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
60  
V
40  
IE=100 A, IC=0  
VCB=50V, IE=0  
V
A
A
6
0.1  
0.1  
0.1  
300  
Collector Cut-off Current  
ICEO  
VCB=35V, IB=0  
Emitter Cut-off Current  
VEB=5V, IC=0  
IEBO  
A
VCE=1V, IC=150mA  
VCE=2, IC=500mA  
IC=150mA, IB=15mA  
IC=150mA, IB=15mA  
HFE(1)  
HFE(2)  
100  
40  
DC Current Gain (Note)  
Collector-Emitter Saturation Voltage  
Base-emitter saturatio voltage  
0.4  
V
V
VCE(sat)  
VBE(sat)  
fT  
0.95  
CE  
C
=10V, I =20mA ,f=100MHz  
Transition Frequency  
V
250  
Mhz  
WEJ ELECTRONIC CO.,LTD  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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