MMBT4401LT1S

更新时间： 2024-01-31 05:40:42

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体开关晶体管
页数	文件大小	规格书
8页	304K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MMBT4401LT1S 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.81	Is Samacsys：	N
最大集电极电流 (IC)：	0.6 A	配置：	Single
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.225 W
子类别：	Other Transistors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

MMBT4401LT1S 数据手册

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by MMBT4401LT1/D

SEMICONDUCTOR TECHNICAL DATA

NPN Silicon

Motorola Preferred Device

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Symbol

Value

Unit

Vdc

CEO

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Vdc

CBO

EBO

Emitter–Base Voltage

6.0

600

Vdc

Collector Current — Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

Symbol

Max

Unit

(1)

Total Device Dissipation FR–5 Board

225

= 25°C

Derate above 25°C

1.8

556

300

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Total Device Dissipation

(2)

Alumina Substrate,

= 25°C

Derate above 25°C

2.4

417

mW/°C

°C/W

°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

DEVICE MARKING

T , T

J stg

–55 to +150

MMBT4401LT1 = 2X

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(3)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

6.0

—

Collector–Base Breakdown Voltage

(I = 0.1 mAdc, I = 0)

(BR)CBO

Emitter–Base Breakdown Voltage

(I = 0.1 mAdc, I = 0)

Vdc

(BR)EBO

—

Base Cutoff Current

(V = 35 Vdc, V

µAdc

BEV

= 0.4 Vdc)

0.1

CE EB

Collector Cutoff Current

(V = 35 Vdc, V

CEX

—

CE EB

1. FR–5 = 1.0

0.75 0.062 in.

2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.

Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

M_Mot_oo_tor_ro_ol_la_a,S_Inm_{c. 1}a₉ll₉–₆Signal Transistors, FETs and Diodes Device Data

12 3 4 5 6 7 8

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