Datasheet > MMBT4401-T

MMBT4401-T

更新时间： 2024-01-29 08:43:11

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	87K
描述
Transistor

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中文翻译

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技术参数
数据手册

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MMBT4401-T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.83

MMBT4401-T 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

MMBT4401

Micro Commercial Components

Features

•

Surface Mount SOT-23 Package

Capable of 350mWatts of Power Dissipation

NPN General

Purpose Amplifier

xꢀ Operating and Storage Junction Temperatures: -55ć to 150ć

•

IC=600mA

Marking:2X/M4A

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

SOT-23

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_BL

Collector-Emitter Breakdown Voltage*

(I_C=1.0mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=10mAdc, I_E=0)

Emitter-Base Breakdown Voltage

(I_E=0.1mAdc, I_C=0)

Base Cutoff Current

Vdc

6.0

Vdc

0.1

µAdc

(V_CE=35Vdc, V_BE=0.4Vdc)

Collector Cutoff Current

(V_CE=35Vdc, V_BE=0.4Vdc)

I_CEX

ON CHARACTERISTICS

DIMENSIONS

h_FE

DC Current Gain*

INCHES

MIN

(I_C=0.1mAdc, V_CE=1.0Vdc)

(I_C=1.0mAdc, V_CE=1.0Vdc)

(I_C=10mAdc, V_CE=1.0Vdc)

(I_C=150mAdc, V_CE=1.0Vdc)

(I_C=500mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(I_C=150mAdc, I_B=15mAdc)

(I_C=500mAdc, I_B=50mAdc)

100

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

300

V_CE(sat)

0.4

0.75

Vdc

.085

.37

V_BE(sat)

0.75

250

0.95

1.2

Suggested Solder

Pad Layout

SMALL-SIGNAL CHARACTERISTICS

f_T

Current Gain-Bandwidth Product

.031

.800

(I_C=20mAdc, V_CE=10Vdc, f=100MHz)

Collector-Base Capacitance

(V_CB=5.0Vdc, I_E=0, f=1.0MHz)

Emitter-Base Capacitance

MHz

C_cb

C_eb

.035

.900

6.5

.079

2.000

inches

(V_BE=0.5Vdc, I_C=0, f=1.0MHz)

30.0

SWITCHING CHARACTERISTICS

t_d

Delay Time

Rise Time

Storage Time

Fall Time

(V_CC=30Vdc, V_BE=0.2Vdc

I_C=150mAdc, I_B1=15mAdc)

(V_CC=30Vdc, I_C=150mAdc

I_B1=I_B2=15mAdc)

225

t_r

t_s

t_f

.037

.950

.037

.950

*Pulse Width ≤ 300µs, Duty Cycle≤ 2.0%

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Revision: 5

2006/09/20

12 3 4

中文翻译

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与MMBT4401-T相关器件

型号	品牌	获取价格	描述	数据表
MMBT4401T_1	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT4401T_2	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT4401-T1	SAMSUNG	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
MMBT4401T-7	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT4401T-7-F	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT4401-TP	MCC	获取价格	NPN General Purpose Amplifier
MMBT4401-TP-HF	MCC	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, HALOGEN
MMBT4401W	SECOS	获取价格	Switching Transistor
MMBT4401W	PANJIT	获取价格	NPN GENERAL PURPOSE SWITCHING TRANSISTOR
MMBT4401W	SEMTECH	获取价格	NPN Silicon General Purpose Transistor

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