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MMBT4401T-7-F PDF预览

MMBT4401T-7-F

更新时间: 2024-02-18 15:30:57
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 437K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT4401T-7-F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.66最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):255 ns最大开启时间(吨):35 ns
Base Number Matches:1

MMBT4401T-7-F 数据手册

 浏览型号MMBT4401T-7-F的Datasheet PDF文件第2页浏览型号MMBT4401T-7-F的Datasheet PDF文件第3页浏览型号MMBT4401T-7-F的Datasheet PDF文件第4页 
SPICE MODEL: MMBT4401T  
MMBT4401T  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
·
·
·
·
Epitaxial Planar Die Construction  
SOT-523  
Complementary PNP Type Available (MMBT4403T)  
Ultra-Small Surface Mount Package  
Dim Min Max Typ  
A
A
B
C
D
G
H
J
0.15 0.30 0.22  
0.75 0.85 0.80  
1.45 1.75 1.60  
Lead Free/RoHS Compliant (Note 2)  
C
C
B
TOP VIEW  
Mechanical Data  
¾
¾
0.50  
E
B
0.90 1.10 1.00  
1.50 1.70 1.60  
0.00 0.10 0.05  
0.60 0.80 0.75  
0.10 0.30 0.22  
0.10 0.20 0.12  
0.45 0.65 0.50  
·
Case: SOT-523  
G
H
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
K
N
M
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
K
L
Terminals: Solderable per MIL-STD-202, Method 208  
J
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
L
D
M
N
a
C
·
·
·
·
Terminal Connections: See Diagram  
Marking (See Page 2): 2X  
0°  
8°  
¾
Ordering & Date Code Information: See Page 2  
Weight: 0.002 grams (approx.)  
All Dimensions in mm  
E
B
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
MMBT4401T  
Unit  
V
Collector-Base Voltage  
60  
40  
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
600  
mA  
mW  
°C/W  
°C  
Pd  
150  
R
qJA  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage and Temperature Range  
833  
Tj, TSTG  
-55 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30272 Rev. 6 - 2  
1 of 4  
MMBT4401T  
www.diodes.com  
ã Diodes Incorporated  

MMBT4401T-7-F 替代型号

型号 品牌 替代类型 描述 数据表
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