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MMBT4401-TP PDF预览

MMBT4401-TP

更新时间: 2024-01-28 16:58:42
品牌 Logo 应用领域
美微科 - MCC 晶体放大器小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 95K
描述
NPN General Purpose Amplifier

MMBT4401-TP 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:ROHS COMPLIANT PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.17
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):255 ns
最大开启时间(吨):35 nsBase Number Matches:1

MMBT4401-TP 数据手册

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M C C  
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20736 Marilla Street Chatsworth  
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TM  
MMBT4401  
Micro Commercial Components  
Features  
Surface Mount SOT-23 Package  
Capable of 350mWatts of Power Dissipation  
NPN General  
Purpose Amplifier  
xꢀ Operating and Storage Junction Temperatures: -55ć to 150ć  
x
IC=600mA  
Marking:2X/M4A  
Case Material:Molded Plastic. UL Flammability  
Classificatio Rating 94-0 and MSL Rating 1  
SOT-23  
A
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
C
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
B
C
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
IBL  
Collector-Emitter Breakdown Voltage*  
(IC=1.0mAdc, IB=0)  
Collector-Base Breakdown Voltage  
(IC=10mAdc, IE=0)  
Emitter-Base Breakdown Voltage  
(IE=0.1mAdc, IC=0)  
Base Cutoff Current  
40  
60  
Vdc  
Vdc  
E
B
F
E
6.0  
Vdc  
0.1  
0.1  
µAdc  
µAdc  
H
G
J
(VCE=35Vdc, VBE=0.4Vdc)  
Collector Cutoff Current  
(VCE=35Vdc, VBE=0.4Vdc)  
ICEX  
K
ON CHARACTERISTICS  
DIMENSIONS  
MM  
hFE  
DC Current Gain*  
INCHES  
MIN  
(IC=0.1mAdc, VCE=1.0Vdc)  
(IC=1.0mAdc, VCE=1.0Vdc)  
(IC=10mAdc, VCE=1.0Vdc)  
(IC=150mAdc, VCE=1.0Vdc)  
(IC=500mAdc, VCE=1.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter Saturation Voltage  
(IC=150mAdc, IB=15mAdc)  
(IC=500mAdc, IB=50mAdc)  
20  
40  
80  
100  
40  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
300  
VCE(sat)  
F
G
H
J
0.4  
0.75  
Vdc  
Vdc  
.085  
.37  
VBE(sat)  
K
0.75  
250  
0.95  
1.2  
Suggested Solder  
Pad Layout  
SMALL-SIGNAL CHARACTERISTICS  
fT  
Current Gain-Bandwidth Product  
.031  
.800  
(IC=20mAdc, VCE=10Vdc, f=100MHz)  
Collector-Base Capacitance  
(VCB=5.0Vdc, IE=0, f=1.0MHz)  
Emitter-Base Capacitance  
MHz  
pF  
Ccb  
Ceb  
.035  
.900  
6.5  
.079  
2.000  
inches  
mm  
(VBE=0.5Vdc, IC=0, f=1.0MHz)  
30.0  
pF  
SWITCHING CHARACTERISTICS  
td  
Delay Time  
Rise Time  
Storage Time  
Fall Time  
(VCC=30Vdc, VBE=0.2Vdc  
IC=150mAdc, IB1=15mAdc)  
(VCC=30Vdc, IC=150mAdc  
IB1=IB2=15mAdc)  
15  
20  
225  
30  
ns  
ns  
ns  
ns  
tr  
ts  
tf  
.037  
.950  
.037  
.950  
*Pulse Width 300µs, Duty Cycle2.0%  
www.mccsemi.com  
1 of 4  
Revision: 6  
2008/01/01  

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