Datasheet > MMBT4403

MMBT4403

更新时间： 2023-12-06 20:11:06

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	820K
描述
SOT-23

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中文翻译

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数据手册

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MMBT4403 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

SOT-23

MMBT4403 ^{TRANSISTOR (PNP)}

FEATURES

1. BASE

Switching transistor

2. EMITTER

3. COLLECTOR

MARKING ：2T

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

-40

Collector-Emitter Voltage

-40

Emitter-Base Voltage

-5

Collector Current

-600

300

417

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_j,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T^a=25℃ unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100μA,I_E=0

V_(BR)CEOI_C=-1mA,I_B=0

V_(BR)EBOI_E=-100μA ,I_C=0

-40

-5

I_CBO

I_CEX

I_EBO

h_FE1

h_FE2

h_FE3

h_FE4

h_FE5

V_CB=-35V,I_E=0

-0.1

μA

Collector cut-off current

V^CE=-35V, V^BE=0.4V

V_EB=-4V,I_C=0

Emitter cut-off current

V_CE=-1V, I_C=-0.1mA

V_CE=-1V, I_C=-1mA

DC current gain

V_CE=-1V, I_C=-10mA

V_CE=-2V, I_C=-150mA

V_CE=-2V, I_C=-500mA

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

I_C=-150mA,I_B=-15mA

I_C=-500mA,I_B=-50mA

V_CE=-10V, I_C=-20mA,f =100MHz

V^CC=-30V, V^BE(off)=-0.5V

I^C=-150mA , IB1=-15mA

V^CC=-30V, I^C=-150mA

I^B1=I^B2=-15mA

100

300

-0.4

-0.75

-0.95

-1.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat

）

Transition frequency

Delay time

f_T

t_d

t_r

200

MHz

Rise time

Storage time

Fall time

t_s

t_f

225

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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