Datasheet > MMBT4403

MMBT4403

更新时间： 2024-09-24 12:32:55

品牌	Logo	应用领域
TYSEMI		开关
页数	文件大小	规格书
2页	197K
描述
Ideal for Medium Power Amplification and Switching

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数据手册

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MMBT4403 数据手册

Product specification

MMBT4403

SOT-23

Unit: mm

+0.1

2.9_-0.1

+0.1

0.4_-0.1

■ Features

●

Ideal for Medium Power Amplification and Switching

●

Complementary NPN Type Available (MMBT4401)

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

-40

Unit

Collector-emitter voltage

-40

Emitter-base voltage

-5

Collector current

-600

300

417

℃/W

℃

Total Device Dissipation Alumina Substrate

Thermal Resistance, Junction?to?Ambient

Junction and Storage Temperature

RθJA

TJ, Tstg

-55 to150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditons

Min

-40

-5

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)CBO IC = 100μA, IE = 0

V(BR)CEO IC = 1.0 mA, IB = 0

V(BR)EBO IE =100μA, IC = 0

ICBO

IEBO

VCB=-35 V, IE=0

VEB=-4V, IC=0

-0.1

μA

Emitter cut-off current

IC = -0.1 mA, VCE = -1.0 V

IC = -1.0 mA, VCE = -1.0 V

IC = -10 mA, VCE = -1.0 V

IC = -150 mA, VCE = -2.0 V

IC = -500 mA, VCE = -2.0 V

100

DC current gain *

hFE

300

IC = -150 mA, IB = -15 mA

IC = -500 mA, IB = -50 mA

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

IC = 20 mA, VCE = 10 V, f = 100 MHz

VCC = 30 V, VEB = 2.0 V,

IC = 150 mA, IB1 = 15 mA

VCC = 30 V, IC = 150 mA,

IB1 = IB2 = 15 mA

-0.4

-0.75

-0.95

-1.3

Collector-emitter saturation voltage

Base-emitter saturation voltage *

VCE(sat)

VBE(sat)

Transition frequency

Delay time

200

MHz

Rise time

Storage time

Fall time

225

* Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.

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