Datasheet > MMBT4403

MMBT4403

更新时间： 2024-09-25 14:55:31

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	1578K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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MMBT4403 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	40
Collector Current - Continuous：	0.6	DC current gain - Min：	100
DC current gain - Max：	300	Transition frequency：	200
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

MMBT4403 数据手册

MMBT4403

PNP General Purpose Transistor

1. BASE

2. EMITTER

3. COLLECTOR

FEATURES

Epitaxial planar die construction.

SOT-23

Min

Dim

Max

3.10

1.50

Complementary NPN type available

(MMBT4401).

2.70

1.10

1.0 Typical

0.4 Typical

Also available in lead free version.

0.35

0.48

2.00

0.1

Ideal for medium power amplification and switching.

1.80

0.02

0.1 Typical

2.20

2.60

APPLICATIONS

All Dimensions in mm

Ideal for medium power amplification and switching.

ORDERING INFORMATION

Type No.

Marking

Package Code

SOT-23

MMBT4403

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-40

UNIT

collector-base voltage

collector-emitter voltage

emitter-base voltage

-40

-5

collector current (DC)

-0.6

0.35

P_C

Collector dissipation

Thermal Resistance,Junction to Ambient

junction and storage temperature

R_θ

357

℃/W

T_j,T_stg

-55 to +150

°C

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

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