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MMBT4401LT3G PDF预览

MMBT4401LT3G

更新时间: 2024-02-03 02:57:54
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关小信号双极晶体管光电二极管
页数 文件大小 规格书
7页 151K
描述
Switching Transistor

MMBT4401LT3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.31
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-236JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:COMMERCIAL
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
最大关闭时间(toff):35 ns最大开启时间(吨):255 ns

MMBT4401LT3G 数据手册

 浏览型号MMBT4401LT3G的Datasheet PDF文件第2页浏览型号MMBT4401LT3G的Datasheet PDF文件第3页浏览型号MMBT4401LT3G的Datasheet PDF文件第4页浏览型号MMBT4401LT3G的Datasheet PDF文件第5页浏览型号MMBT4401LT3G的Datasheet PDF文件第6页浏览型号MMBT4401LT3G的Datasheet PDF文件第7页 
MMBT4401LT1G  
Switching Transistor  
NPN Silicon  
Features  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
http://onsemi.com  
Compliant  
COLLECTOR  
3
MAXIMUM RATINGS  
1
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
BASE  
V
CEO  
V
CBO  
V
EBO  
60  
Vdc  
2
EMITTER  
6.0  
Vdc  
Collector Current Continuous  
Collector Current Peak  
I
600  
900  
mAdc  
mAdc  
C
I
CM  
3
SOT23 (TO236)  
THERMAL CHARACTERISTICS  
Characteristic  
CASE 318  
STYLE 6  
1
Symbol  
Max  
Unit  
2
Total Device Dissipation FR5 Board  
P
D
(Note 1) @T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
MARKING DIAGRAM  
Thermal Resistance, JunctiontoAmbient  
Total Device Dissipation Alumina  
R
556  
°C/W  
q
JA  
P
D
2X M G  
Substrate (Note 2) @T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
G
1
Thermal Resistance, JunctiontoAmbient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
2X = Specific Device Code  
T , T  
J
55 to +150  
stg  
M
G
= Date Code*  
= PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
*Transient pulses must not cause the junction temperature to be exceeded.  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT4401LT1G SOT23  
(PbFree)  
3000 Tape & Reel  
MMBT4401LT3G SOT23  
(PbFree)  
10,000 Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
July, 2010 Rev. 9  
MMBT4401LT1/D  

MMBT4401LT3G 替代型号

型号 品牌 替代类型 描述 数据表
SMMBT4401LT1G ONSEMI

类似代替

Switching Transistor NPN Silicon
MMBT4401LT1G ONSEMI

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Switching Transistor(NPN Silicon)
MMBT4401LT1 ONSEMI

类似代替

Switching Transistor(NPN Silicon)

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