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MMBT4401-7-F PDF预览

MMBT4401-7-F

更新时间: 2024-01-19 02:07:39
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
4页 125K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT4401-7-F 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:19 weeks
风险等级:0.65Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:441320
Samacsys Pin Count:3Samacsys Part Category:Transistor BJT NPN
Samacsys Package Category:SOT23 (3-Pin)Samacsys Footprint Name:MMBT4401-7-F
Samacsys Released Date:2019-05-17 02:33:11Is Samacsys:N
其他特性:HIGH RELIABILITY最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):255 ns
最大开启时间(吨):35 nsBase Number Matches:1

MMBT4401-7-F 数据手册

 浏览型号MMBT4401-7-F的Datasheet PDF文件第2页浏览型号MMBT4401-7-F的Datasheet PDF文件第3页浏览型号MMBT4401-7-F的Datasheet PDF文件第4页 
SPICE MODEL: MMBT4401  
MMBT4401  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
A
Epitaxial Planar Die Construction  
Complementary PNP Type Available  
(MMBT4403)  
Ideal for Medium Power Amplification and Switching  
Lead Free/RoHS Compliant (Note 2)  
SOT-23  
C
Dim  
A
B
C
D
E
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
B
C
TOP VIEW  
E
B
Qualified to AEC-Q101 Standards for High  
Reliability  
D
G
E
H
Mechanical Data  
K
M
Case: SOT-23  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Alloy 42 leadframe).  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.008 grams (approximate)  
G
H
J
J
L
K
L
C
M
α
All Dimensions in mm  
E
B
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current - Continuous (Note 1)  
Power Dissipation (Note 1)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Pd  
RθJA  
Value  
60  
40  
Unit  
V
V
6.0  
V
600  
300  
417  
mA  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-55 to +150  
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
DS30039 Rev. 9 - 2  
1 of 4  
MMBT4401  
© Diodes Incorporated  
www.diodes.com  

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