5秒后页面跳转
MMBT4401-13-F PDF预览

MMBT4401-13-F

更新时间: 2024-01-10 16:51:42
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
4页 81K
描述
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT4401-13-F 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:0.71Is Samacsys:N
其他特性:HIGH RELIABILITY最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHz最大关闭时间(toff):255 ns
最大开启时间(吨):35 nsBase Number Matches:1

MMBT4401-13-F 数据手册

 浏览型号MMBT4401-13-F的Datasheet PDF文件第2页浏览型号MMBT4401-13-F的Datasheet PDF文件第3页浏览型号MMBT4401-13-F的Datasheet PDF文件第4页 
MMBT4401  
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Epitaxial Planar Die Construction  
Case: SOT-23  
Complementary PNP Type Available (MMBT4403)  
Ideal for Medium Power Amplification and Switching  
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)  
"Green" Device (Note 3)  
Case Material: Molded Plastic, “Green” Molding Compound,  
Note 3. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe  
(Lead Free Plating) Solderable per MIL-STD-202, Method 208  
Qualified to AEC-Q101 Standards for High Reliability  
Marking Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.0082 grams (approximate)  
C
E
B
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
60  
Unit  
V
Collector-Emitter Voltage  
40  
V
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous (Note 1)  
600  
mA  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Symbol  
PD  
Value  
300  
Unit  
mW  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
417  
°C/W  
°C  
Rθ  
TJ, TSTG  
JA  
-55 to +150  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which  
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead. Halogen and Antimony Free.  
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 4  
www.diodes.com  
December 2008  
© Diodes Incorporated  
MMBT4401  
Document number: DS30039 Rev. 13 - 2  

MMBT4401-13-F 替代型号

型号 品牌 替代类型 描述 数据表
MMBT4401-7-F DIODES

类似代替

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT4401LT3G ONSEMI

功能相似

Switching Transistor
MMBT4401LT1G ONSEMI

功能相似

Switching Transistor(NPN Silicon)

与MMBT4401-13-F相关器件

型号 品牌 获取价格 描述 数据表
MMBT4401-7 DIODES

获取价格

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT4401-7-F DIODES

获取价格

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT4401-AE3-R UTC

获取价格

NPN GENERAL PURPOSE AMPLIFIER
MMBT4401-AH SWST

获取价格

小信号晶体管
MMBT4401-AL3-R UTC

获取价格

NPN GENERAL PURPOSE AMPLIFIER
MMBT4401-AU PANJIT

获取价格

SOT-23
MMBT4401-CH SWST

获取价格

小信号晶体管
MMBT4401D87Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SO-3
MMBT4401-D87Z FAIRCHILD

获取价格

NPN General Pupose Amplifier
MMBT4401E SWST

获取价格

小信号晶体管