Datasheet > MMBT4401LT1

MMBT4401LT1

更新时间： 2024-09-25 10:52:31

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描述
NPN EPITAXIAL PLANAR TRANSISTOR

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数据手册

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MMBT4401LT1 数据手册

TIGER ELECTRONIC CO.,LTD

MMBT4401LT1

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The MMBT4401LT1 is designed for general purpose switching and

amplifier applications.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature............................................................................................... -55~+150°C

Junction Temperature......................................................................................................+150°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 60 V

VCEO Collector to Emitter Voltage...................................................................................... 40 V

VEBO Emitter to Base Voltage .............................................................................................. 6 V

IC Collector Current ....................................................................................................... 600 mA

(Ta=25°C)

Characteristics

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICEX

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

hFE1

100

250

IC=100uA

IC=1mA

IE=10uA

VCE=35V, VBE=-0.4V

IC=150mA, IB=15mA

IC=500mA, IB=50mA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

VCE=1V, IC=0.1mA

VCE=1V, IC=1mA

100

0.4

750

950

1.2

hFE2

hFE3

hFE4

hFE5

Cob

VCE=1V, IC=10mA

300

VCE=1V, IC=150mA

VCE=2V, IC=500mA

VCE=10V, IC=20mA, f=100MHz

VCB=5V, f=1MHz

MHz

6.5

TIGER ELECTRONIC CO.,LTD

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