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MMBT4401LT1 PDF预览

MMBT4401LT1

更新时间: 2024-02-05 21:48:22
品牌 Logo 应用领域
威伦 - WILLAS 晶体晶体管
页数 文件大小 规格书
6页 428K
描述
General Purpose Transistor

MMBT4401LT1 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.81Is Samacsys:N
最大集电极电流 (IC):0.6 A配置:Single
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.225 W
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):250 MHz
Base Number Matches:1

MMBT4401LT1 数据手册

 浏览型号MMBT4401LT1的Datasheet PDF文件第2页浏览型号MMBT4401LT1的Datasheet PDF文件第3页浏览型号MMBT4401LT1的Datasheet PDF文件第4页浏览型号MMBT4401LT1的Datasheet PDF文件第5页浏览型号MMBT4401LT1的Datasheet PDF文件第6页 
WILLAS  
MMBT4401LT1  
General Purpose Transistor  
We declare that the material of product compliance with RoHS requirements.  
Pb-Free package is available  
RoHS product for packing code suffix ”G”  
Halogen free product for packing code suffix “H”  
ORDERING INFORMATION  
Device  
Marking  
Shipping  
M MBT4401LT1  
2X  
3000/Tape & Reel  
MAXIMUM RATINGS  
SOT–23  
Rating  
Symbol  
Value  
40  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
V CEO  
V CBO  
V EBO  
I C  
60  
Vdc  
6.0  
Vdc  
3
COLLECTOR  
600  
mAdc  
1
BASE  
THERMAL CHARACTERISTICS  
Characteristic  
2
Symbol  
Max  
Unit  
EMITTER  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
PD  
225  
mW  
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
RθJA  
PD  
Alumina Substrate, (2) TA = 25°C  
Derate above 25°C  
2.4  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
RθJA  
417  
TJ , Tstg  
–55 to +150  
DEVICE MARKING  
M MBT4401LT1 = 2X  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (3)  
(I C = 1.0 mAdc, I B = 0)  
V (BR)CEO  
V (BR)CBO  
V (BR)EBO  
I BEV  
Vdc  
Vdc  
40  
60  
6.0  
Collector–Base Breakdown Voltage  
(I C = 0.1 mAdc, I E = 0)  
Emitter–Base Breakdown Voltage  
(I E = 0.1 mAdc, I C = 0)  
Vdc  
Base Cutoff Current  
µAdc  
µAdc  
(V CE = 35 Vdc, V EB = 0.4 Vdc)  
Collector Cutoff Current  
0.1  
0.1  
I CEX  
(V CE = 35 Vdc, V EB = 0.4 Vdc)  
1. FR–5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
3. Pulse Test: Pulse Width  
<300 µs; Duty Cycle <2.0%.  
2012-11  
WILLAS ELECTRONIC CORP.  

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