WILLAS
MMBT4401LT1
General Purpose Transistor
•
We declare that the material of product compliance with RoHS requirements.
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
ORDERING INFORMATION
Device
Marking
Shipping
M MBT4401LT1
2X
3000/Tape & Reel
MAXIMUM RATINGS
SOT–23
Rating
Symbol
Value
40
Unit
Vdc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V CEO
V CBO
V EBO
I C
60
Vdc
6.0
Vdc
3
COLLECTOR
600
mAdc
1
BASE
THERMAL CHARACTERISTICS
Characteristic
2
Symbol
Max
Unit
EMITTER
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
PD
225
mW
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
RθJA
PD
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
2.4
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
TJ , Tstg
–55 to +150
DEVICE MARKING
M MBT4401LT1 = 2X
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = 1.0 mAdc, I B = 0)
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BEV
Vdc
Vdc
40
60
6.0
—
—
—
Collector–Base Breakdown Voltage
(I C = 0.1 mAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = 0.1 mAdc, I C = 0)
Vdc
—
Base Cutoff Current
µAdc
µAdc
(V CE = 35 Vdc, V EB = 0.4 Vdc)
Collector Cutoff Current
0.1
0.1
I CEX
(V CE = 35 Vdc, V EB = 0.4 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
—
3. Pulse Test: Pulse Width
<300 µs; Duty Cycle <2.0%.
2012-11
WILLAS ELECTRONIC CORP.