5秒后页面跳转
MMBT3904WT1G PDF预览

MMBT3904WT1G

更新时间: 2024-01-04 07:15:42
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管放大器
页数 文件大小 规格书
12页 155K
描述
General Purpose Transistors

MMBT3904WT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.52Is Samacsys:N
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz最大关闭时间(toff):250 ns
最大开启时间(吨):70 nsBase Number Matches:1

MMBT3904WT1G 数据手册

 浏览型号MMBT3904WT1G的Datasheet PDF文件第2页浏览型号MMBT3904WT1G的Datasheet PDF文件第3页浏览型号MMBT3904WT1G的Datasheet PDF文件第4页浏览型号MMBT3904WT1G的Datasheet PDF文件第5页浏览型号MMBT3904WT1G的Datasheet PDF文件第6页浏览型号MMBT3904WT1G的Datasheet PDF文件第7页 
MMBT3904WT1, NPN  
MMBT3906WT1, PNP  
General Purpose  
Transistors  
NPN and PNP Silicon  
http://onsemi.com  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT323/SC70 package which  
is designed for low power surface mount applications.  
COLLECTOR  
3
Features  
1
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
BASE  
Compliant  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
3
SC70 (SOT323)  
CASE 419  
CollectorEmitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
1
MMBT3904WT1  
MMBT3906WT1  
40  
40  
STYLE 3  
2
CollectorBase Voltage  
EmitterBase Voltage  
Vdc  
Vdc  
MMBT3904WT1  
MMBT3906WT1  
60  
40  
MARKING DIAGRAM  
MMBT3904WT1  
MMBT3906WT1  
6.0  
5.0  
xx M G  
G
Collector Current Continuous  
MMBT3904WT1  
MMBT3906WT1  
I
C
mAdc  
1
200  
200  
xx = AM for MMBT3904WT1  
= 2A for MMBT3906WT1  
THERMAL CHARACTERISTICS  
M
G
= Date Code*  
= PbFree Package  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation (Note 1)  
P
D
150  
mW  
(Note: Microdot may be in either location)  
@T = 25°C  
A
*Date Code orientation may vary depending  
upon manufacturing location.  
Thermal Resistance, JunctiontoAmbient  
R
833  
°C/W  
°C  
q
JA  
Junction and Storage Temperature  
T , T  
55 to +150  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum  
recommended footprint.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBT3904WT1G  
SC70/  
SOT323  
(PbFree)  
3000/Tape & Reel  
MMBT3906WT1G  
SC70/  
SOT323  
(PbFree)  
3000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
January, 2011 Rev. 7  
MMBT3904WT1/D  
 

MMBT3904WT1G 替代型号

型号 品牌 替代类型 描述 数据表
SMMBT3904WT1G ONSEMI

类似代替

General Purpose Transistors NPN and PNP Silicon
MMBT3904 ONSEMI

类似代替

GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
MMBT3904LT1G ONSEMI

类似代替

General Purpose Transistor (NPN Silicon)

与MMBT3904WT1G相关器件

型号 品牌 获取价格 描述 数据表
MMBT3904WT3 MOTOROLA

获取价格

200mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT3904ZK FOSHAN

获取价格

DFN1006-3L
MMBT3906 DAYA

获取价格

SOT-23 Plastic-Encapsulate Transistors
MMBT3906 RECTRON

获取价格

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)
MMBT3906 SEMTECH

获取价格

PNP Silicon General Purpose Transistor
MMBT3906 WEITRON

获取价格

General Purpose Transistor PNP Silicon
MMBT3906 UTC

获取价格

GENERAL PURPOSE APPLIATION
MMBT3906 INFINEON

获取价格

PNP Silicon Switching Transistor
MMBT3906 KEXIN

获取价格

PNP Transistors
MMBT3906 NEXPERIA

获取价格

PNP switching transistorProduction