Datasheet > MMBT3906

MMBT3906

更新时间： 2024-12-01 04:39:27

品牌	Logo	应用领域
TSC		晶体晶体管开关光电二极管
页数	文件大小	规格书
3页	298K
描述
30.3 Watts PNP Plastic-Encapsulate Transistors

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MMBT3906 数据手册

MMBT3906

0.3 Watts PNP Plastic-Encapsulate Transistors

RoHS

COMPLIANCE

SOT-23

Features

As complementary type, the NPN transistor

MMBT3904 is recommended

Epitaxial planar die construction

Marking: 2A

Dimensions in inches and (millimeters)

Maximum Ratings T =25 ^oC unless otherwise specified

Value

-40

-5

-0.2

0.3

Type Number

Symbol

V_CBO

V_CEO

V_EBO

I_C

Units

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current - continuous

Collector Power dissipation

ELECTRICAL CHARACTERISTICS

P_C

Parameter

Collector-base breakdown voltage

Symbol

V_(BR)CBO

V_(BR)CEO

V_BE(ON)

I_CBO

MIN

-40

-5

MAX

Units

I_C=-10uA, I_e=0

Collector-emitter breakdown voltage I_C=-1mA, I_B=0

Emitter-base breakdown voltage

Collector cut-off current

Collector cur-off current

Emitter cut-off current

DC current gain

I_E=-10uA, I_C=0

V_CB=-40V I_E=0

-0.1

-50

-0.1

300

V_CE=-30V V_BE(off)=-3V

V_EB=--5V I_C=0

I_CEX

I_EBO

V_CE=-1V I_C=-10mA

V_CE=-1V I_C=-50mA

V_CE=-1V I_C=-100mA

h_FE(1)

100

h_FE(2)

h_FE(3)

Collector-emitter saturation voltage I_C=-50mA, I_B=-5mA

Base-emitter saturation voltage I_C=-50mA, I_B=-5mA

Transition frequency V_CE=-20V I_C=-10mA f=100MHz

-0.4

V_CE(sat)

V_BE(sat)

-0.95

f_T

250

MHz

^oC

Delay time

Rise time

Storage time

Fall time

V_CC=-3V, V_BE=-0.5V I_C=-10mA

I_B1=-1.0mA

V_CC=-3V, I_C=-10mA

225

I_B1= I_B2=-1.0mA

Operating and Storage Temperature Range

-55 to + 150

T_J, T_STG

CLASSIFICATION OF h_FE1

Rank

100-200

200-300

Range

Version: A07

12 3

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