5秒后页面跳转
MMBT3906_09 PDF预览

MMBT3906_09

更新时间: 2024-11-18 10:52:31
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体开关晶体管
页数 文件大小 规格书
2页 102K
描述
Surface Mount Si-Epi-Planar Switching Transistors

MMBT3906_09 数据手册

 浏览型号MMBT3906_09的Datasheet PDF文件第2页 
MMBT3906  
MMBT3906  
Surface Mount Si-Epi-Planar Switching Transistors  
Si-Epi-Planar Schalttransistoren für die Oberflächenmontage  
PNP  
PNP  
Version 2009-04-02  
Power dissipation – Verlustleistung  
250 mW  
2.9±0.1  
1.1  
Plastic case  
Kunststoffgehäuse  
SOT-23  
(TO-236)  
0.4  
3
Type  
Code  
Weight approx. – Gewicht ca.  
0.01 g  
1
2
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.9  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions - Maße [mm]  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
MMBT3906  
40 V  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung  
Collector-Base-voltage – Kollektor-Basis-Spannung  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
B open  
E open  
C open  
- VCEO  
- VCBO  
- VEBO  
Ptot  
40 V  
5 V  
250 mW 1)  
Collector current – Kollektorstrom (dc)  
- IC  
200 mA  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis 2)  
- IC = 0.1 mA, - VCE = 1 V  
- IC = 1 mA, - VCE = 1 V  
- IC = 10 mA, - VCE = 1 V  
- IC = 50 mA, - VCE = 1 V  
- IC = 100 mA,- VCE = 1 V  
hFE  
hFE  
hFE  
hFE  
hFE  
40  
80  
100  
60  
300  
30  
h-Parameters at/bei - VCE = 10 V, - IC = 1 mA, f = 1 kHz  
Small signal current gain – Kleinsignal-Stromverstärkung  
Input impedance – Eingangs-Impedanz  
hfe  
hie  
hoe  
hre  
100  
2 kΩ  
400  
12 kΩ  
60 µS  
10*10-4  
Output admittance – Ausgangs-Leitwert  
3 µS  
Reverse voltage transfer ratio – Spannungsrückwirkung  
0.1*10-4  
1
2
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

与MMBT3906_09相关器件

型号 品牌 获取价格 描述 数据表
MMBT3906_1 DIODES

获取价格

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT3906_10 TSC

获取价格

350mW, PNP Small Signal Transistor
MMBT3906_10 MCC

获取价格

NPN General Purpose Amplifier
MMBT3906_11 MCC

获取价格

PNP General Purpose Amplifier
MMBT3906_14 TSC

获取价格

350mW, PNP Small Signal Transistor
MMBT3906_15 KEXIN

获取价格

PNP Transistors
MMBT3906-13 DIODES

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC
MMBT3906-13-F DIODES

获取价格

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, GREEN,
MMBT3906-3L BL Galaxy Electrical

获取价格

40V,0.1A,General Purpose PNP Bipolar Transistor
MMBT3906-7 DIODES

获取价格

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR