Datasheet > MMBT3906_10

MMBT3906_10

更新时间： 2024-11-18 10:52:31

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
4页	377K
描述
350mW, PNP Small Signal Transistor

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数据手册

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MMBT3906_10 数据手册

MMBT3906

350mW, PNP Small Signal Transistor

Small Signal Diode

SOT-23

3 Collector

2 Emitter

1 Base

Features

Epitaxial planar die construction

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Unit (mm)

Unit (inch)

Dimensions

Min

2.70

1.20

0.30

1.78

2.20

0.95

Max

Min

Max

Mechanical Data

Case : SOT- 23 small outline plastic package

3.10 0.106 0.122

1.65 0.047 0.065

0.50 0.012 0.020

2.04 0.070 0.080

3.00 0.087 0.118

1.40 0.037 0.055

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

High temperature soldering guaranteed: 260°C/10s

Weight : 0.008gram (approximately)

Marking Code : 2A

0.550 REF

0.022 REF

Ordering Information

Suggested PAD Layout

0.95

Part No.

MMBT3906 RF

MMBT3906 RFG

Package

SOT-23

Packing

Marking

0.037

3K / 7" Reel

2.0

0.079

0.9

0.035

0.8

0.031

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

350

Units

Power Dissipation

P^D

V_CBO

V_CEO

V_EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-40

-5

Collector Current

-200

°C/W

°C

R_thJA

T^J, TSTG

Thermal resistance junction-ambient

Junction and Storage Temperature Range

357

-55 to + 150

Notes:1. Valid provided that electrodes are kept at ambient temperature

Version : C10

12 3 4

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