Datasheet > MMBT3906

MMBT3906

更新时间： 2024-12-01 10:52:31

品牌	Logo	应用领域
SECOS		晶体晶体管开关光电二极管
页数	文件大小	规格书
5页	1061K
描述
-200 mA, -40 V PNP Plastic Encapsulated Transistor

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MMBT3906 数据手册

MMBT3906

-200 mA, -40 V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

SOT-23



Collector current capability I_C=-200mA

Collector-emitter voltage V_CEO=-40V.

APPLICATION



General switching and amplification.

Top View

C B

PACKAGING DIMENSION

Collector





Base



Emitter

Millimeter

REF.

Min.

Max.

3.00

2.55

1.40

Min.

Max.

2.80

2.25

1.20

0.10 REF.

0.55 REF.

MARKING

0.08

0.15

0.90

1.80

0.30

1.15

2.00

0.50

0.5 REF.

0.95 TYP.

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

PARAMETER

SYMBOL

V_CEO

RATINGS

-40

UNIT

Vdc

Collector - Emitter Voltage

Collector - Base Voltage

V_CBO

-40

Vdc

Emitter - Base Voltage

V_EBO

-5.0

Vdc

Collector Current - Continuous

I_C

-200

mAdc

Total Device Dissipation FR-5 Board⁽¹⁾, T_A=25°C

Total Device Dissipation FR-5 Board, Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation Alumina Substrate⁽²⁾, T_A=25°C

Total Device Dissipation Alumina Substrate, Derate above 25°C

Thermal Resistance, Junction to Ambien

Junction, Storage Temperature

225

P_D

R_θJA

P_D

1.8

mW/°C

°C / W

556

300

2.4

mW/°C

°C / W

°C

R_θJA

417

T_J, T_STG

-55 ~ +150

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

30-Aug-2010 Rev. D

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