Datasheet > MMBT3906

MMBT3906

更新时间： 2024-11-04 22:54:43

品牌	Logo	应用领域
智威 - ZOWIE		晶体晶体管开关光电二极管
页数	文件大小	规格书
5页	109K
描述
GENERAL PURPOSE TRANSISTOR NPN SILICON

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中文翻译

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数据手册

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MMBT3906 数据手册

Zowie Technology Corporation

General Purpose Transistor

NPN Silicon

COLLECTOR

BASE

MMBT3906

EMITTER

SOT-23

MAXIMUM RATINGS

Value

-40

Symbol

VCEO

VCBO

VEBO

Unit

Vdc

Rating

Collector-Emitter Voltage

Collector-Base Voltage

-40

Vdc

Emitter-Base Voltage

-5.0

-200

Vdc

Collector Current-Continuous

mAdc

THERMAL CHARACTERISTICS

Max.

Symbol

Unit

Characteristic

Total Device Dissipation FR-5 Board⁽¹⁾TA=25^oC

225

1.8

Derate above 25^oC

mW / ^oC

Thermal Resistance Junction to Ambient

556

^oC / W

Total Device Dissipation Alumina Substrate,⁽²⁾TA=25^oC

300

2.4

Derate above 25^oC

mW / ^oC

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

417

^oC / W

^oC

TJ,TSTG

-55 to +150

DEVICE MARKING

MMBT3906=2A

ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)

Symbol

Max.

Min.

-40

Unit

Vdc

Characteristic

OFF CHARACTERISTICS

(3)

Collector-Emitter Breakdowe Voltage

( IC=1.0mAdc, IB=0 )

V(BR)CEO

Collector-Base Breakdowe Voltage

( IC= -10 uAdc, IE=0 )

V(BR)CBO

V(BR)EBO

-40

Vdc

Emitter-Base Breakdowe Voltage

( IE= -10 uAdc, IC=0 )

-5.0

Base Cutoff Current

( VCE= -30 Vdc, VEB= -3.0 Vdc )

IBL

-50

nAdc

Collector Cutoff Current

( VCE= -30 Vdc, VEB= -3.0 Vdc )

ICEX

REV. : 0

Zowie Technology Corporation

12 3 4 5

中文翻译

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